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January 1, 1986Journal of Lightwave Technology

High-speed electroabsorption modulator with strip-loaded GaInAsP planar waveguide

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Authors

YNYukio NodaTohoku UniversityMSM. SuzukiWaseda UniversityYKY. KushiroSeikei University

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Noda et al. (1986) studied this question.

synapsesocial.com/papers/6a6f736ee36a167817e12908https://doi.org/10.1109/jlt.1986.1074650
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electroabsorption in Al<i>y</i> Ga1−<i>y</i> As–Al<i>x</i> Ga1−<i>x</i> As double heterostructures1973 · 55 citations
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  3. 31.6 GHz electroabsorption light modulation in InGaAsP/InP double heterostructures with strip-loaded planar waveguide1985 · 18 citations
  4. 4Bias-temperature life tests for planar-type VPE-grown InGaAs/InP heterostructure APD's1985 · 9 citations
  5. 5Control of Zn Doping for Growth of InP pn Junction by Liquid Phase Epitaxy1980 · 21 citations