The influence of dislocations on the minority electron lifetime in p-type GaAs layers and on AlGaAs/GaAs HBTs has been investigated. The minority electron lifetime in 1*10/sup 19//cm/sup 3/ doped p-GaAs decreases significantly when the dislocation density is greater than 10/sup 7//cm/sup 2/. This result agrees well with analysis of carrier transport in highly dislocated material. Current gain reduction in HBTs with high dislocation density is found to be due to two effects: reduction of the electron lifetime in the base layer and an increase of the recombination current in the emitter-base junction depletion region. These two effects are comparable in reducing the current gain.>
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Itô et al. (1992) studied this question.
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