InxGa1−xAs Schottky-barrier diodes for detection in the 0.9–1.06-μm wavelength range have been incorporated in high-purity GaAs planar waveguides using a selective epitaxial growth process. A quantum efficiency of 60% at 1.06 μm has been obtained for these detectors, and current gain has been observed.
No takes yet. Share an insight, caveat, or question.
Stillman et al. (1974) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: