The I-V characteristics of some GaAs Schottky-barrier IMPATT diodes are found to be nearly ideal at operating temperatures (∼200°C). Fabricated on epitaxial n-type substrate with platinum contacts, the diodes use a truncated cone shape to avoid soft breakdown. The breakdown voltage and its temperature dependence are close to calculated values for one-sided abrupt junctions.
No takes yet. Share an insight, caveat, or question.
Coleman et al. (1971) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: