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February 1, 1975Applied Physics Letters

Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices

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Authors

PAP. ArnettIBM (United States)BYB. H. YunIBM (United States)

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Arnett et al. (1975) studied this question.

synapsesocial.com/papers/6a6f742dac440176ef282178https://doi.org/10.1063/1.88093
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  1. 1Direct display of electron back tunneling in MNOS memory capacitors1973 · 48 citations
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