Effect of electron-phonon drag on the magnetoconductivity tensor ofn-germanium

A density-matrix formalism is developed to calculate the magnetoconductivity tensor in semiconductors, taking into account the mutual electron-phonon drag. An application of the formalism is made to the four-ellipsoidal model of n-germanium under the conditions where acoustic-phonon scattering is the predominant mechanism of scattering and the high-temperature limit of the phonon distribution is valid. The magnitude of the relaxation effects of secondary interactions for electrons and for phonons is found by making comparison with the existing experimental data. It is suggested that scattering of electrons by transitions to bound impurity states plays an important role in the case of transverse magnetoresistance.