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January 15, 1983Applied Physics Letters

Impurity induced disordering of strained GaP-GaAs1−xPx(x∼0.6) superlattices

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Authors

MCM. D. CamrasTrimble (United States)NHN. HolonyakGeneral Electric (United States)KHK. HessInstitute for Advanced Study

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Camras et al. (1983) studied this question.

synapsesocial.com/papers/6a6f75a378a11c550e092ca6https://doi.org/10.1063/1.93875
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