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Gallium arsenide layers with mobilities up to 7900 cm 2 v −1 s −1 at 295°K and 52 000 cm 2 v −1 s −1 at 78°K have been grown epitaxially from gallium melts, using arsenic trichloride as the source of arsenic. Controlled doping with selenium has also been carried out.
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Goodwin et al. (1968) studied this question.
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