Phonon-assisted recombination in a multiple-quantum-well LPE InP-In1−xGaxP1−zAsz heterostructure laser

By means of computer-controlled liquid-phase epitaxy, multiple-quantum-well InP-In1−xGaxP1−zAsz (x∼0.13, z∼0.29) heterostructures of uniform well (Lz∼160 Å) and coupling barrier size are grown and are examined in photoluminescence. Laser operation (77 °K) of a six-well five-barrier undoped quaternary quantum-well heterostructure is identified an LO phonon energy (1×h/ωLO∼30 meV) below the lowest confined-particle transitions (No. 1 e→hh, E1) or at energy h/ω∼E1−h/ωLO.