Laser operation (4.2–300 °K) of multiple-quantum-well AlxGa1−xAs-GaAs heterostructures on a phonon (LO) sideband ∼36 meV below the lowest confined-particle transitions is described. Phonon-sideband laser data are presented on two different metalorganic chemical-vapor-deposited (MO-CVD) quantum-well heterostructures with four GaAs active regions (Lz∼50 and ∼90 Å) coupled by three AlxGa1−xAs (x∼0.35) barriers.
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Holonyak et al. (1979) studied this question.
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