An important aspect of the large expansion in the development and production of solid-state devices has been the demand for more sophisticated techniques for determining the electrical properties of semiconductors, especially silicon and the III-V compounds. A very wide range of measurement techniques now exists and it is the purpose of this article to review those techniques which are in widespread use or which show promise for future application, and at a time for continuing innovation in this area, to indicate present trends and material problems which may arise in the near future.
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Blood et al. (1978) studied this question.
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