We have investigated by transmission electron microscopy the enhanced disordering of GaAs-AlAs superlattices due to Si and S implantation with subsquent annealing. The implants were performed at 77 K, room temperature, and 210 °C at a dose of 2.5×1014 cm−2 with energy of 100 keV. The greatest enhancement occurs, after annealing, for Si implants performed at 77 K. We find no enhancement due to S implants. The apparent damage due to implantation prior to annealing is strikingly less for superlattices compared with bulk GaAs.
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Dobisz et al. (1986) studied this question.
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