The lattice locations of Sn and Sb atoms implanted in GaP single crystals have been studied as a function of implantation temperature by means of ion channeling and ion-induced X-rays. Angular scans through the major axes were performed to distinguish two types of substitutional sites in GaP. For the implantation at 400°C, about 80% of Sn atoms and 100% of Sb atoms were located on Ga- and P-substitutional sites, respectively. Sn and Sb atoms implanted at room temperature were found to be on off-lattice sites even after annealing at 700°C. An implantation annealing stage for lattice location and lattice disorder was observed in the temperature range from 200°C to 250°C.
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Takai et al. (1977) studied this question.
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