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Two methods for growing solutions of GaxIn1−xP alloys are compared. The first using a Ga-In bath continuously fed with P, leads to relativerly inhomogeneous crystals. The second, using an In bath fed with P and Ga, allows to produce homogeneous crystals for all values of x. The properties of these crystals are briefly described.
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Laugier et al. (1971) studied this question.
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