Cyclotron resonance with epitaxial films of n type inp

Radiation of a wavelength of 337 mu from an hcn gas laser is employed to observe cyclotron resonance from the electrons in epitaxial films of inp having a peak electron mobility as high as 60000 cm 2 v -1 s -1 . The temperature range investigated is between 10 and 50 k and omega(tau) values as high as 28 are observed at the lowest temperatures. The band edge mass is found to be 0.0810 +or- 0.0003 m 0 at 10 k and 0.0817 +or- 0.0008 m 0 at 50 k. For comparison cyclotron resonance experiments are also reported for the electrons in GaAs and the band edge mass is found to be 0.0667 +or- 0.0003 m 0 .