Theory and tools for analysis and design of millimeter- and submillimeter-wave multipliers are discussed. Experimental work is reviewed. The Schottky diode model at submillimeter frequencies, use of Schottky multiplier chains versus direct higher-order multipliers, and the effect of cooling on Schottky diode multipliers are discussed. Alternative diodes such as the high electron mobility varactor (HEMV), the barrier-intrinsic-n/sup +/ diode (BIN), the barrier-n-n/sup +/ diode (BNN), the quantum well diode (QWD), and the single barrier varactor (SBV) are discussed, with attention given to their potential submillimeter frequency multipliers.>
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Antti V. Räisänen (1992) studied this question.