Leakage current through high permittivity thin films

For the leakage current through high‐permittivity, low‐electronic mobility, perovskite‐type thin films a bulk‐limited conduction mechanism is suggested, in contrast to the often assumed interface injection limitation. This model can successfully describe measured leakage data of field, temperature, thickness and electrode dependence in SrTiO 3 and Ba 0.7 Sr 0.3 TiO 3 thin films.