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June 1, 1999Journal of the European Ceramic SocietyOpen Access

Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0·7Sr0·3TiO3 thin film capacitors

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Authors

JBJ. D. BanieckiSLAC National Accelerator LaboratoryRLR. B. LaibowitzIBM Research - Thomas J. Watson Research CenterTST. M. ShawThe University of Texas at Austin

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Baniecki et al. (1999) studied this question.

synapsesocial.com/papers/6a9d74fb85bdd799da46d9bchttps://doi.org/10.1016/s0955-2219(98)00449-x
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