Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 1, 1985IEEE Journal of Solid-State Circuits

Development of the Self-Aligned Titanium Silicide Process for VLSI Applications

View Full Paper
Ask AI
Bookmark
Share

Authors

MAM.E. AlperinTHT.C. HollawayRHR.A. HakenTexas Instruments (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Alperin et al. (1985) studied this question.

synapsesocial.com/papers/6a6f8059a528af2d65c305f3https://doi.org/10.1109/jssc.1985.1052277
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Silicide formation in thin cosputtered (titanium + silicon) films on polycrystalline silicon and SiO2.1980 · 131 citations
  2. 2Silicide formation in thin cosputtered (tantalum + silicon) films on polycrystalline silicon and SiO21980 · 51 citations