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May 15, 1996Journal of Applied Physics

Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealing

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GGG. GagnonUniversity of AlbertaJCJ. F. CurrieLouisiana State University Agricultural CenterJBJ. L. BrebnerPolytechnique Montréal

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Gagnon et al. (1996) studied this question.

synapsesocial.com/papers/6a6f80d435aa2c282ce0dc26https://doi.org/10.1063/1.362418
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Development of the Self-Aligned Titanium Silicide Process for VLSI Applications1985 · 78 citations
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