An anomalous output voltage overshoot observed during the turn-off of single short-channel thin-film silicon-on-insulator SOI n-MOSFETs is reported. The parasitic floating-base bipolar device, triggered by impact ionization, is shown to be responsible for this effect. Because switching occurs over a subnanosecond time scale, the charge dynamics related to the bipolar action are essential to explain this voltage overshoot.>
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Dubois et al. (1993) studied this question.
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