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The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes (LEDs) is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current, which results from the Mg-dopant-related polarization screening. The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region. Light outputs follow the power law L ∝ I m , with smaller parameter m in the LEDs with less Mg back-diffusion, indicating a lower density of trap states. The trap-assisted tunneling current is also suppressed by reducing Mg-defect-related nonradiative centers in the active region. Furthermore, the forward current-voltage characteristics are improved.
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Zhang et al. (2016) studied this question.
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