On a Novel Ferro Resistive Random Access Memory (FRRAM): Basic Model and First Experiments

We report on a novel non-volatile memory concept for resistive information storage. The particular device structure consists of a conductive ferroelectric/non-ferroelectric 2-layer sequence. Resistive switching is observed, by applying a voltage pulses. Our model predicts that the switching correlates with a change of the potential barrier height inside the structure. It may also explain resistive switching in systems consisting only of one ferroelectric layer and by assuming the presence of non-ferroelectric interface layers. The operation of the device is demonstrated for the PZT (48/52) system with a SrRuO3 bottom electrode and a Pt top electrode. The simulated and measured I-V curves are in good agreement.