Growth of Buffer Layers on Si Substrate for High-Tc Superconducting Thin Films

We have investigated the crystalline properties and surface morphology of the buffer layers of Y 2 O 3 , ZrO 2 and Y 2 O 3 /ZrO 2 on a Si(100) substrate for a superconducting thin film. The results of RHEED and X-ray diffraction indicate the hetero-epitaxial growth of buffer layers on Si(100) substrates. Epitaxial planes of the buffer layers on the Si(100) surface are (110), (100) and (100)/(100) for Y 2 O 3 , ZrO 2 and Y 2 O 3 /ZrO 2 , respectively. YBa 2 Cu 3 O 7- x thin films have been grown on Si with each buffer layer. The highest critical temperature obtained was 88 K on the Si with the Y 2 O 3 /ZrO 2 buffer layer.