Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
April 6, 2009Applied Physics Letters

Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors

View Full Paper
Ask AI
Bookmark
Share

Authors

MKMasataka KanoDai Nippon Printing (Japan)TMTakeo MinariNational Institute for Materials ScienceKTKazuhito TsukagoshiNational Yang Ming Chiao Tung University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Kano et al. (2009) studied this question.

synapsesocial.com/papers/6a6fb6e02163a0a01bc3fbdahttps://doi.org/10.1063/1.3115826
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Reducing the contact resistance of bottom-contact pentacene thin-film transistors by employing a MoOx carrier injection layer2008 · 136 citations
  2. 2Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films2000 · 283 citations
  3. 3An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors1992 · 320 citations
  4. 4Frequency response analysis of pentacene thin-film transistors with low impedance contact by interface molecular doping2007 · 62 citations
  5. 5Highly Soluble [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors2007 · 969 citations