Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
November 18, 1991Applied Physics Letters

Compositional disordering of strained InGaAs/GaAs quantum wells by Au implantation: Channeling effects

View Full Paper
Ask AI
Bookmark
Share

Authors

TJT. E. JackmanUniversity of StuttgartSCS. CharbonneauCentre Intégré Universitaire de Santé et de Services Sociaux du Centre-Sud-de-l'Île-de-MontréalLALouise AllardCentre Hospitalier de l’Université de Montréal

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Jackman et al. (1991) studied this question.

synapsesocial.com/papers/6a6fb99b2163a0a01bc3fdf6https://doi.org/10.1063/1.105899
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Focused ion beam channeling effects and ultimate sizes of GaAlAs/GaAs nanostructures1990 · 38 citations
  2. 2Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties1988 · 112 citations
  3. 3Performance of a Focused-Ion-Beam Implanter with Tilt-Writing Function1989 · 15 citations
  4. 4Implantation enhanced interdiffusion in GaAs/GaAlAs quantum structures1989 · 36 citations
  5. 5A focused ion beam vacuum lithography process compatible with gas source molecular beam epitaxy1989 · 22 citations