The results of a theoretical study together with an experimental verification of the effects of strain on the laser characteristics of InxGa1−xAs/InGaAsP quantum-well lasers are reported. It is shown that tensile strained quantum-well lasers can perform as well as compressively strained lasers with respect to the threshold current density. Both show an improved performance when compared to the unstrained case. The origin of this improved performance is discussed.
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Krijn et al. (1992) studied this question.
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