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June 17, 1991Applied Physics Letters

Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of the strain of InGaAs/InP strained-layer multiquantum well lasers

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Authors

LTL.F. TiemeijerNXP (Netherlands)PTP.J.A. ThijsEindhoven University of TechnologyPWP. J. de WaardPhilips (Finland)

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Tiemeijer et al. (1991) studied this question.

synapsesocial.com/papers/6a6fbbd575498292b7091cdfhttps://doi.org/10.1063/1.104771
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