The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.
No takes yet. Share an insight, caveat, or question.
Chow et al. (1992) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: