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March 26, 1990Applied Physics Letters

Strained InGaAs/InP quantum well lasers

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Authors

HTH. TemkinTexas Tech UniversityTTT. Tanbun-EkAT&T (United States)RLR. A. LoganAT&T (United States)

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Temkin et al. (1990) studied this question.

synapsesocial.com/papers/6a70d91a35aa2c282ce22d2chttps://doi.org/10.1063/1.102562
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor deposition1986 · 105 citations
  2. 2InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition1989 · 83 citations
  3. 3Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm1984 · 46 citations