Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 6, 1989Applied Physics Letters

InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ1 μm) by metalorganic chemical vapor deposition

View Full Paper
Ask AI
Bookmark
Share

Authors

PYP. K. YorkPrinceton UniversityKBK. J. BeerninkCenter for Solar Energy Research and StudiesGFG. Esteban FernándezChildren's Hospital of Los Angeles

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

York et al. (1989) studied this question.

synapsesocial.com/papers/6a835d75f341e548e9d9d321https://doi.org/10.1063/1.100935
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Conditions for uniform growth of GaAs by metalorganic chemical vapor deposition in a vertical reactor1985 · 28 citations
  2. 2Metalorganic vapor phase epitaxial growth for buried heterostructure GaAlAs lasers with semi-insulating blocking layers1987 · 9 citations
  3. 3High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array1988 · 33 citations
  4. 4Strained-layer quantum-well injection laser1984 · 120 citations
  5. 5GaAs–Ga1−<i>x</i>Al<i>x</i>As buried-heterostructure injection lasers1974 · 277 citations