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December 10, 1981Electronics Letters

Low threshold current CW operation of GaInAsP/InP buried heterostructure distributed Bragg-reflector integrated-twin-guide laser emitting at 1.5–1.6 μm

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Authors

TTT. Tanbun-EkCoherent (United States)SAShigehisa AraiTokyo Institute of TechnologyFKFumio KoyamaTokyo Institute of Technology

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Tanbun-Ek et al. (1981) studied this question.

synapsesocial.com/papers/6a6fbbd92163a0a01bc40029https://doi.org/10.1049/el:19810675
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes and Integrated Optical Circuits1980 · 40 citations
  2. 2Spectral losses of low-OH-content optical fibres1976 · 294 citations