The refractive index has been determined from a reflectance measurement between photon energies of 0.5 and 1.4 eV at room temperature for Ga 1- x In x As samples with x <0.5 prepared by vapor-phase epitaxy. Dispersion characteristics of the refractive index below the bandgap is analyzed on the basis of a single-oscillator model with two parameters, E o and E d . It seems that both E o and E d vary linearly with x between GaAs and InAs.
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Tôru Takagi (1978) studied this question.