A GaAs metal-semiconductor-metal photodetector fabricated in a symmetrical and interdigital Schottky contact structure on a semi-insulating GaAs substrate is discussed. The device exhibits a high-speed response and a very low dark current, even with a moderate size (200 mu m/sup 2/). Ultrafast responsivity is due to the high drift velocity of the photoelectrons and low capacitance. A design theory for optimum performance which includes a compromise between the circuit time constant and the transit time is described.>
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Nakajima et al. (1990) studied this question.
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