Schottky contacts on n-In/sub 0.53/Ga/sub 0.47/As with enhanced barriers by counter-doped interfacial layers

The authors report the preparation and properties of Schottky contacts on n-InGaAs structures. The barrier height is enhanced by counter-doped p/sup +/-InGaAs layers (zinc-doped, N/sub A/=8*10/sup 18/ cm/sup -3/, d=30 and 60 nm), situated between an n-InGaAs active layer and a barrier metal. Schottky diodes exhibit low reverse current densities, J/sub R/=5*10/sup -6/ A/cm/sup 2/, the ideality factor is near unity, n=1.12, and effective barrier heights are 0.66-0.68 eV.>