Barrier height enhancement of InP-based n -Ga 0.47 In 0.53 As Schottky-barrier diodes grown by molecular beam epitaxy

Barrier height enhancement of an InP-based p+n-Ga0.47In0.53As Schottky diode grown by MBE has been demonstrated for infra-red photodetector applications. A barrier height of 0.35eV for n-Ga0.47In0.53As Schottky barrier diodes, was increased to the effective barrier height of 0.55eV, with a p+-Ga0.47In0.53As surface layer of 30 nm thick. The results show a reverse leakage current density of 1.5 × 10−3 A/cm2 and a junction capacitance of 0.3 pF, which are comparable to those of p-Ga0.47In0.53As Schottkybarrier diodes at a reverse bias voltage of 5 V.