High-efficiency, low-threshold, Zn-diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition

Deep Zn-diffused, 4-μm stripe thin p active layer GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition are reported. Threshold currents as low as 40 mA (length 220 μm), a characteristic temperature as large as 170 °C, and external differential quantum efficiencies as high as 80–90% are obtained. Single longitudinal and transverse mode operation of these lasers is also observed.