The paper describes a 3-V monolithically integrated metal-semiconductor-metal photodetector (MSM-PD) and transimpedance amplifier (TIA) chip that is fully compliant with the Gigabit Ethernet receiver specification for the short-reach application (IEEE 802.3z 1000BASE-SX). Key typical performance specifications are -22 dBm sensitivity, 1200 MHz 3-dB bandwidth, 1300-V/W differential responsivity, and 120-mW power dissipation at 3 V. The chip is fabricated in a production 0.5-/spl mu/m gate length GaAs MESFET technology and is packaged in a TO-46 header with a flat window and a ball-lens cap option.
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Jayakumar et al. (2000) studied this question.
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