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January 7, 1982Electronics Letters

InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold current

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Authors

IMI. MitoNEC (Japan)MKM. KitamuraChiba UniversityKKK. KaedeNEC (Japan)

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Mito et al. (1982) studied this question.

synapsesocial.com/papers/6a6fbd09ce524a4339c39af1https://doi.org/10.1049/el:19820002
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Also Consider

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  1. 1Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers1980 · 93 citations
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  3. 31500-h continuous cw operation of double-heterostructure GaInAsP/InP lasers1977 · 92 citations
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  5. 5Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m1976 · 275 citations