The threshold current of a GaInAsP/InP surface-emitting (SE) injection laser has been reduced to 15 mA (CW) at 77 K. The diameter of circular buried mesa was made smaller (∼18 µmφ), and a 5-pair SiO 2 /TiO 2 dielectric multilayer reflector was introduced to a circular buried heterostructure (CBH) SE laser. The threshold exhibited the lowest value ever obtained.
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Watanabe et al. (1987) studied this question.
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