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August 1, 1983Applied Physics Letters

High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

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NBN. Bar-ChaimOpticaKLKam Y. LauUniversity of California, BerkeleyIUI. UryCalifornia Institute of Technology

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Bar-Chaim et al. (1983) studied this question.

synapsesocial.com/papers/6a6fbd9675498292b7091fa8https://doi.org/10.1063/1.94319
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