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Tin-diffused GaAs layer samples, with mean concentrations larger than 1019 cm−3, were obtained by irradiating with a ruby laser GaAs substrates covered with thin tin layers. Mobilities between 100 and 200 cm2/V s were obtained. Both carrier concentration and mobility decrease with increasing energy density. Strong segregation effects were observed in the samples processed with large energy densities.
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Garcı́a et al. (1990) studied this question.
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