ArF and XeF excimer laser radiation has been used to form p-n junctions in GaAs. The laser releases S atoms by the dissociation of H2S gas and simultaneously heats the substrate to allow incorporation of the S dopant. Solar cells having AM1 efficiencies of 10.8% have been fabricated from these junctions. The process can also produce doped GaAs layers with sheet resistances as low as 30 Ω/⧠.
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Deutsch et al. (1982) studied this question.
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