A self-aligned-gate inversion-mode InP metal-insulator-semiconductor field-effect transistor (MISFET) was successfully fabricated by using plasma-assisted chemical-vapor-deposited Si 3 N 4 film both as the insulator and as the capping layer for the annealing process. A channel mobility of 2700 cm 2 /Vs and a transconductance of 55 mS/mm at a gate voltage of 4 V were achieved with a reasonably low source-drain leakage current.
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Ōigawa et al. (1987) studied this question.
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