A virtual self-aligned process for fabricating IGFET's (or MISFET's) has been developed. Devices fabricated on semiinsulating InP substrates using this process show: (i) square-law characteristics, (ii) an inverse-relationship between transconductance and gate length, and (iii) high surface channel electron mobilities on the order of 1000 cm2/v.sec.
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Tseng et al. (1981) studied this question.
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