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October 1, 1985Applied Physics Letters

Operation principle of the InGaAsP/InP laser transistor

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Authors

YMYoshihiro MoriIbaraki UniversityJSJun ShibataAichi Institute of TechnologyYSYoichi SasaiPanasonic (Japan)

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Mori et al. (1985) studied this question.

synapsesocial.com/papers/6a6fbde5ac440176ef286756https://doi.org/10.1063/1.96045
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Also Consider

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  1. 1Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors1984 · 71 citations
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  5. 5Fundamental characteristics of an InGaAsP/InP laser transistor1985 · 31 citations