The temperature range within which epitaxial unintentionally doped InP can be deposited from In and P2 beams by MBE on to (100) InP substrates has been determined to be 100–405 °C. Above 410 °C whisker growth from In droplets via a vapor-liquid-solid process occurs; below 95 °C polycrystalline layers result on account of the nondissociation of P2.
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Norris et al. (1979) studied this question.
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