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The conditions for the growth of InP films from In and P 2 beams in an ultra-high-vacuum environment have been studied. The maximum temperature at which congruent evaporation from an InP (100) surface takes place was found to be 638±10 K, and the restrictions which this limit imposes on the growth conditions are discussed. Stoichiometric InP films have been successfully grown at 573 K.
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R. F. C. Farrow (1974) studied this question.
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