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InGaAsP/InP multiquantum-well (MQW) structures have been successfully grown by low-pressure MOCVD. The abruptness of the As atom profile was measured to be 20 Å by SIMS analysis. Continuous operation of InGaAsP/InP lasers using MQW structure has been achieved at 80 K.
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Morisaki et al. (1985) studied this question.
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