The effects of 35-KeV electron beam and 60Co gamma radiation on modulation-doped GaAs-AlxGa1−xAs heterostructures were studied by measuring the transport and the quantum transport of and the field effect on, the two-dimensional (2D) electrons in GaAs at the heterojunction interface. While the γ radiation in doses up to 1.3×106 rad causes no appreciable changes in the 2D transport properties, the electron beam irradiation reduces the electron mobility. This reduction in electron mobility is ∼50% for electron doses of 10−10 C/μm2.
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Tsui et al. (1983) studied this question.
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